Fig. 5: Switchable ferroelectric polarization in ReSe2 vertical devices.
From: Emergence of sliding ferroelectricity in naturally parallel-stacked multilayer ReSe2 semiconductor
a P-E hysteresis loops at different scanning voltages. b Switchable ferroelectric diode effect. c Endurance of sliding ferroelectrics against switching cycles after applying ±3 V pulse voltages with pulse width of 1 s. d I-V curves under different light intensities and in the dark. e Programmable photovoltaic effect after applying polarization voltages of 0 V (initial), −2 V, −3 V, 2 V, and 3 V, respectively. f Time-dependent photocurrent at various light intensities (Vread = 0 V).
