Fig. 5: Design of island-bridge nHOED and its sensing behaviors.
a, Device architecture of the stretchable vertical ion-gated transistor array involves SEBS elastic substrate, functional islands, and serpentine Ag nanowire interconnects. b, Optical microscope images of the device under stretching and poking deformations. c, Mechanical simulation showing the strain distribution of a transistor for stretching under 100% strain. d, Ilight and Idark under stretching strains from 0% to 100% and after multiple stretching-releasing cycles of up to 1000 times at 25% strain. e, Illustration of ECG recording and spontaneous heart activity measured on a human subject with the device under stretching strains of 0%, and 25%. Inset: the enlarged ECG signals under stretching strain of 0% and 25%, respectively.
