Fig. 2: Dielectric properties of MoO3 nanoflakes.
From: Controllable growth of MoO3 dielectrics with sub-1 nm equivalent oxide thickness for 2D electronics
a Schematic diagram of the metal-insulator-metal (MIM) device configuration using MoO3 as the dielectrics. b Capacitance-voltage (C–V) characteristics of the MIM devices with varied thickness. c Capacitance-voltage (C–V) measurement of the device with different areas. d Dielectric constant versus energy band gap of advanced dielectric materials in literature21,34,35,38,39,40. e Breakdown field strength of the MoO3 dielectric of different device pixel. Inset: MIM device array for breakdown voltage measurement. f I–V characteristic of a typical MoO3-based in-plane device, demonstrating its insulating behavior. Inset: Schematic illustration of the horizontal transport device.
