Fig. 1: Schematics of the device.
From: Dominant end-tunneling effect in two distinct Luttinger liquids coexisting in one quantum wire
A Optical micrograph of the device, showing the very regular array of wire gates as a uniform blur in the center. The air bridges provide electrical connections to the p and wire gates. B Top view with the upper well (UW) and the electrostatic gates (color-coded). A narrow region (p-region) in the upper well remains 2D and is covered by a gate `p' (labeled PG) to allow tuning of its density. Lower panel shows depleted (white) and non-depleted (light blue) regions of the upper 2DEG after all voltages are set. C Side views of the double-well structure, showing where tunneling from a wire occurs to the lower 2DEG (■), and a region between wires (●), corresponding to the dashed lines in (B). The centers of the upper well (UW) and lower well (LW) are separated by d = 32 nm. The UW 2DEG beneath the wire gate is formed into an array of 1D quantum wires by the negative voltage on the wire gate Vg, and Vsd is the source-drain voltage between two wells. Other gates: AB is an air bridge, BG is the barrier gate allowing current to flow only by tunneling; SG is the split gate depleting both wells and MG is the mid-gate, injecting current only into UW.
