Fig. 5: Saturation of conductance at low temperatures and occupation of higher subbands.
From: Dominant end-tunneling effect in two distinct Luttinger liquids coexisting in one quantum wire
A Saturation exponents n obtained from fitting the low-temperature data in Fig. 3A to \(G\propto {\left({T}_{0}^{n}+{T}^{n}\right)}^{\frac{\alpha }{n}}\) for Vg = − 550, − 570 and − 590 mV with the error bars indicating the rms error in the fit. B Saturation temperatures T0 obtained in the same fit for the full range of Vg with the error bars indicating the range of values that give an acceptable fit. C Voltage cut for Vg = − 590 mV with two occupied subbands and low temperature, T = 120 mK. The dashed lines are Eq. (1) with two exponents α1 = 0.28 (blue line) and α2 = 0.46 (magenta line) obtained by fitting the corresponding regions in the data in this voltage cut. The crossover voltage between the two exponents is Vsd = 0.12 mV. D–F Evolution of G(B, Vsd) as the finger-gate voltage is decreased, for Vg = −630, −590 and − 550 mV. The negative of the second-order derivative of the conductance G with respect to the magnetic field B is plotted, in which the maximum of the signal corresponds to the centers of the lines. From (D–F), more subbands are populated, as can be seen by the appearance of additional crossings around kF,(1,2,3). The labels (c, s), (1, 2, 3) mark the nonlinear spinon and holon modes away from the linear region, which form the Fermi points for each subband where they cross the Fermi level.
