Fig. 2: Orbital torque efficiency.
From: Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe3GaTe2
a The Vmix and the corresponding fitting VA and VS of the Ti (10 nm)/Ni (5 nm) device were measured by the spin-torque ferromagnetic resonance method under 8.5 GHz. b Angular dependence of VA and VS and the corresponding sin2φcosφ fittings for Ti (10 nm)/Ni (5 nm) device. c Azimuthal angle (φ) dependent second harmonic Hall resistance \({R}_{xy}^{2\omega }\) under Hext = 4.5 T of the Fe3GaTe2 (~15 nm)/Ti (10 nm) device measured by the harmonic Hall voltage measurement method. d The A value as a function of the 1/Heff by fitting \({V}_{xy}^{2\omega }-\varphi\) relations under different Hext.
