Fig. 2: Analyses of carrier dynamics for spatially confined PbSe microstructures.
From: Spatial confined hot carrier dynamics for beyond unity quantum efficiency detection
a Reflectance imaging of spatially confined PbSe devices. The red box indicates the confined area. Scale bar, 10 μm. b Normalized transient reflectivity ΔR/R in the confined channel. c Slow carrier lifetime (τslow) with error bars (standard deviation) calculated from (b).
