Fig. 2: Atomic structures, domain configurations, and epitaxial relationships of HZO-based heterostructures.
From: Interface-controlled uniaxial in-plane ferroelectricity in Hf0.5Zr0.5O2(100) epitaxial thin films
a HAADF-STEM image of the HZO(10 nm)/LSMO(5 u.c.)/STO(110) heterostructure, viewed along the STO[001]c zone-axis. The inset of (a) is a zoom-in STEM image acquired from the area marked in the yellow box. b FFT pattern of a (111)O-oriented O-phase HZO domain. c Structure model of the O-phase HZO, viewed along [0-11] axis. d Left panel: Pole figure measured from the HZO(10 nm)/LSMO(5 u.c.)/STO(110) sample at 2θ ~ 30.2°. The φ and χ scanning ranges are 0–360° and 35–80°, respectively. Right panel: Schematic in-plane epitaxial relationships between the HZO(111)O domains and the underlying LSMO(110) bottom electrode. e HAADF-STEM image of the HZO(10 nm)/STO(110) heterostructure, viewed along the HZO[001]O axis. The inset displays a zoom-in image acquired from the area marked in the yellow box. f FFT pattern of a (100)O-oriented O-phase HZO domain. g Structure model of the O-phase HZO, viewed along the HZO[001]O axis. h Left panel: Pole figure about {11-1} peaks measured from the HZO/STO sample at 2θ ~ 30.2°, The φ and χ ranges are 0–360° and 35–80°, respectively. Right panel: Schematic in-plane epitaxial relationships between the HZO(100)O lattice and the STO(110) substrate.
