Fig. 5: Interface reconstruction in the HZO(100)O/STO(110) film.
From: Interface-controlled uniaxial in-plane ferroelectricity in Hf0.5Zr0.5O2(100) epitaxial thin films
a HAADF-STEM image measured near the HZO/STO(110) interface, viewed along STO[\(1\bar{1}0\)] zone axis. The solid line (yellow) marks the laterally staggered interface. b–d Zoom-in STEM images with HZO/STO step-like atomic contrasts, acquired from 3 pre-selected regions (marked by dashed boxes in (a)). The atomic contrasts of Hf(Zr) and Sr are labeled by orange and green circles, respectively. The mixed Hf(Zr) and Sr contrasts are marked by the bi-color circles. e DFT-calculated surface energies (γ) of different HZO(111)O, HZO(100)O, and several representative pseudo-cubic (110)-oriented ABO3 surfaces. f Schematic atomic structure of HZO(100)O/STO(110) interface with staggered reconstruction and HZO(111)O/LSMO(110) interface with domain-matching epitaxy growth mode.
