Table 1 Comparison of the key parameters for 2D ferroelectric semiconductors
Material | P direction | Eg Type | Eg (eV) | Tc (K) | Ref. |
|---|---|---|---|---|---|
CuInP2S6 | OOP | Direct | 2.8 | 320 | |
ZB’ type α-In2Se3 | IP, OOP | Direct | 1.39 | ~700 | |
β’-In2Se3 | IP | Indirect | – | 473 | |
γ-In2Se3 | IP, OOP | Direct | 1.95 | – | |
3R-MoS2 | OOP | Indirect | 1.2 | 650 | |
β-InSe | IP, OOP | Direct | 1.28 | – | |
γ-InSe | IP, OOP | Direct | 1.2 | 300 | |
SnS | IP | Indirect | 1.23 | – | |
SnSe | IP | Direct | 2.13 | 400 | |
SnTe | IP | Direct | 1.6 | 270 | |
d1T-MoTe2 | OOP | Direct | 1.2 | 330 | |
1T’-ReS2 | OOP | Direct | – | 405 | |
CuCrS2 | IP, OOP | Indirect | – | ~700 | |
γ-GaSe | IP, OOP | Direct | 2.01 | – | |
WZ’ type α-In2Se3 | IP, OOP | Indirect | 0.8 (bulk) 1.6 (1 L) | >620 | This work |
