Fig. 3: Charge-transport and FI-ESR data of a conventional rubrene FET.
From: Long spin lifetimes of charge carriers in rubrene crystals due to fast transient-localization motion
a Conductivity and (b) corresponding mobility data at 260, 280, and 300 K. The temperature-inhibited mobility confirms that charge transport in this device is dictated by transient localization. c T1 and T2 in the device from 200 to 290 K. The microsecond-long relaxation times are nearly the same as those observed in our ion-gel-gated devices in this temperature regime. This supports our interpretation that transient localization sets the overall magnitude of the relaxation times for rubrene devices. Insets: an image of a conventional rubrene ESR device with multiple crystals (bottom) and the corresponding correlation time τc from 200 to 290 K (top).
