Fig. 2: Working mechanisms of the attention-inspired device.
From: Adaptive spatial-temporal information processing based on in-memory attention-inspired devices
a Structure of an attention-inspired device working in writing and computing modes. Writing mode: b Writing mode configuration. c Output characteristics of the MoS2 channel. The drain-to-source voltage VDS = 1.00 V. d Attention-inspired device filament state transfer curve. The voltage scanning path is from 1 to 4. The control gate voltage VCG = 5.00 V. e Filament shunt current modulation characteristics with cut-off, gate-controlled, and resistive regions varying with VCG. Computing mode (attention distribution computing): f, IS − VIN transport curves under different VCG from −1.80 to 0.00 V. IS is the source current. Device structure schematics illustrate states of the attention-inspired device and current directions under each voltage configuration. IN and CG electrode voltage configurations are represented by blue (low voltage), red (high voltage), or gray (arbitrary voltage) colors. g, IS − VCG attention distribution characteristics. The input voltages VIN− = − 0.72 V, VIN+ = −0.36 V. h, Spatial and temporal attention varying with VCG that exhibit dynamic attention adjustment properties. Dash lines show the exponential fitting. The source voltage VS = − 0.20 V in (f−h). Computing mode (determination computing): i Bidirectional determination computing curves of the attention-inspired device. j Weight plasticity adjusted by VIN+. The dash line shows the linear fitting. VS = 0.20 V and VCG = 0.60 V in i − j. VD = 0.00 V and the substrate voltage VB = − 1.00 V in (f−j).
