Fig. 3: Effects of the HZO capacitor architecture on the electric performances.
From: Fatigue-free ferroelectricity in Hf0.5Zr0.5O2 ultrathin films via interfacial design
a Schematics depicting the impact of capacitor structure on the built-in bias (Ebi) and its influence on the external electric fields applied in different orientations. The pink arrows within the schematic diagrams of the films denote the Ebi, with their sizes indicating the magnitude of Ebi. The multicolored arrows external to the films represent the composite electric field, formed by the superposition of Ebi and the applied electric field (Eap), with the length of the arrow proportionally representing the magnitude of the composite field. Spheres of varying colors are indicative of VO undergoing forward and reverse migration, respectively, with the length of the tails signifying the degree of mobility. b Illustration of fatigue behaviors for capacitors with various architectures and imprints. c, d Positive-up negative-down (PUND) curves and leakage current measurements for HZO devices with diverse structural designs.
