Fig. 5: Intrinsically stretchable organic transistors and inverters employing FMM films of N2200. | Nature Communications

Fig. 5: Intrinsically stretchable organic transistors and inverters employing FMM films of N2200.

From: Biomimetic fibrous semiconducting micromesh via tuning phase separation for high-performance stretchable optoelectronic synapses

Fig. 5: Intrinsically stretchable organic transistors and inverters employing FMM films of N2200.The alt text for this image may have been generated using AI.

a Device structure of the stretchable OFET. The initial channel length and width were 100 μm and 5000 μm, respectively. Channel length and width, and the capacity of the stretchable dielectric layer under biaxial strain are listed in the Supplementary Table 5. b Transfer curves of the fully stretchable OFETs employing FMM film, neat film and LS film of N2200 (ε = 0%, 50% and 100%). c Output curves at initial state and 100% strain of the OFET in (b). d Comparison of mobility retention of stretchable OFETs employing conjugated polymer/elastomer blends in reported works and this work, i.e. DPP-TT/SEBS26, FIID-CF3TVT/SEBS30, N2200/Butyl rubber54, PDPPTVT/ Butyl rubber54, P3HT/SEBS55, N2200/PU25, N2200/PBAT. All the OFETs were stretched to 100% strain. e Comparison of the on-current of the stretchable OFETs employing neat film, FMM film and LS film of N2200 under various strain. The on-current was extracted from the transfer curves at VG = 60 V, VDS = 60 V. f Schematic of the stretchable organic complementary inverter with the optical microscope image and the circuit diagram. g Representative voltage transfer curve (VTC) of the stretchable inverter under various strain along the charge transport direction. h Parameter changes of device performance under various strains along the charge transport direction.

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