Fig. 2: Action potentials recording via EGOFETs compared with gold standards in electrophysiology.
a Left y-axis: Drain-Source Current IDS (black solid line) and Gate-Source leakage current IGS (gray dashed line) versus Gate-Source Voltage VGS transfer characteristic curves of EGOFETs in electrophysiological condition and in the presence of the hiPSC-CM monolayer. Right y-axis: The blue continuous line is the calculated transconductance from the transfer curve. The interdigitated EGOFET has a channel length LCh of 10 µm and channel width WCh of 19,500 µm. b AP recording of the spontaneously beating hiPSC-CMs, where the black trace depicts ∆IDS(t) versus time recorded at fixed gate and drain voltages: VGS = −0.8 V, VDS = −0.5 V; blue trace shows the AP recording obtained by patch clamp technique in perforated patch configuration and the red trace is the FP recording obtained from commercial MEAs. c APD at 20% (APD20), 50% (APD50) and 90 % (APD90) of the repolarization phase extracted from various EGOFET (n = 14) and patch clamp (n = 19) traces. Two-sided Student’s t test analysis revealed no statistically significant differences in the APDs recorded using EGOFET compared to those obtained via patch clamp. The horizontal lines within the boxes represent the median. The boxes represent 25th and 75th percentiles. Whiskers represent the min-max range. d Beating frequency of the AP extracted from EGOFET (n = 14), patch clamp (n = 19) and from the FP extracted from MEA (n = 8) traces.
