Fig. 3: Action potential recorded at different gate bias point. | Nature Communications

Fig. 3: Action potential recorded at different gate bias point.

From: Non-invasive action potential recordings using printed electrolyte-gated polymer field-effect transistors

Fig. 3

a Source-Drain Current IDS versus Gate-Source Voltage VGS transfer characteristic curves of the EGOFETs, manifesting the dynamic AP modulation superimposed to the static curve. VGS was swept from 0.5 V to −0.8 V in steps of 1 mV, while VDS = −0.5 V. b Transistor current trace ∆IDS recorded at different VGS ranging from a full on-state (VGS = −0.8 V, black trace) to the off-state (VGS = 0.2 V, dark blue trace) in steps of 0.2 V.

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