Fig. 1: Experimental platform for high-pressure quantum sensing using \({{{{\rm{V}}}}}_{{{{\rm{B}}}}}^{-}\) defects in hBN.
From: Probing stress and magnetism at high pressures with two-dimensional quantum sensors
a Top: Schematic of the hBN layer with \({{{{\rm{V}}}}}_{{{{\rm{B}}}}}^{-}\) defects used for stress and magnetism sensing. Bottom: Energy-level diagram of the \({{{{\rm{V}}}}}_{{{{\rm{B}}}}}^{-}\) spin triplet ground state, showing Zeeman splitting induced by a magnetic field and energy shifts caused by in-plane stress components. The dual sensing capabilities enable simultaneous characterization of stress and magnetic fields. b Cr;'oss-sectional schematic of the DAC, illustrating the positioning of the hBN flake containing \({{{{\rm{V}}}}}_{{{{\rm{B}}}}}^{-}\) defects on the culet, the platinum wire for microwave delivery, and the ruby microsphere for pressure calibration. The inset (top left) provides an expanded view of the DAC configuration and sample chamber alignment.
