Fig. 1: Adsorption energy calculations of VdW-β-Ga2O3 epitaxy on polycrystalline diamond.
From: Van der Waals β-Ga2O3 thin films on polycrystalline diamond substrates
a Atomic structures of O atoms adsorbed on ML-graphene/diamond, ML-h-BN/diamond, diamond substrate visualized. The orientations of the diamond are [100], [110], and [111]. Both top and side views are provided. b Adsorption energies of oxygen atoms for the configurations depicted in (a). c Schematics illustrating the atomic structures of epitaxial Ga2O3 bulk material with ML-h-BN and Graphene as insertion layers. d Adsorption energy trends for epitaxial Ga2O3 and e O atoms as a function of the number of graphene and h-BN layers, with the number of insertion layers ranging from 1 to 6. Source data are provided as a Source Data file.
