Table 2 4He concentration in KJG SiC grain from Murchison

From: History of individual presolar SiC grains revealed by stellar winds

Grain

size /µm

mass† /g

bulk 4He /mL g-1

bulk 4He /mL

bulk 4He /atom

Fluence /mL cm-2

Fluence /atom cm-2

Implantation range /nm

Implantation energy /keV

Distance (1) /ly

Distance (2) /ly

Formation age (1) /My

Formation age (2) /My

A3-01a

2.7

3.32E−11

0.061

2.02E−12

5.44E + 07

8.84E−06

2.38E + 14

100

15

1.7

0.9

−0.05

−0.03

A3-01b

1.8

9.83E−12

0.030

2.95E−13

7.93E + 06

2.90E−06

7.80E + 13

50

7

2.9

1.6

−0.09

−0.05

A3-02

2.2

1.79E−11

0.0002

3.59E−15

9.65E + 04

2.36E−08

6.35E + 11

  

32.4

17.7

−0.95

−0.52

A3-03

2.2

1.79E−11

0.0007

1.26E−14

3.38E + 05

8.26E−08

2.22E + 12

  

17.3

9.5

−0.51

−0.28

A3-04

1.1

2.24E−12

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

A3-05

0.9

1.23E−12

0.003

3.69E−15

9.91E + 04

1.45E−07

3.90E + 12

  

13.1

7.2

−0.38

−0.21

A3-06

1.1

2.24E−12

0.003

6.73E−15

1.81E + 05

1.77E−07

4.76E + 12

  

11.8

6.5

−0.35

−0.19

A3-07

0.6

3.64E−13

0.006

2.18E−15

5.87E + 04

1.93E−07

5.20E + 12

  

11.3

6.2

−0.33

−0.18

A3-09a

2.0

1.35E−11

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

A3-09b

2.8

3.70E−11

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

b.d.

A3-10

1.6

6.90E−12

0.001

6.90E−15

1.86E + 05

8.59E−08

2.31E + 12

  

17.0

9.3

−0.50

−0.27

A3-11

1.5

5.69E−12

0.003

1.71E−14

4.59E + 05

2.42E−07

6.50E + 12

  

10.1

5.5

−0.30

−0.16

A3-12a

3.6

7.86E−11

0.059

4.64E−12

1.25E + 08

1.14E−05

3.07E + 14

100

15

1.5

0.8

−0.04

−0.02

A3-12b

1.8

9.83E−12

*

*

*

*

*

*

*

*

*

*

*

A3-12c

1.8

9.83E−12

0.004

3.93E−14

1.06E + 06

3.86E−07

1.04E + 13

  

8.0

4.4

−0.24

−0.13

average

1.8

1.64E−11

0.016

6.41E−13

1.72E + 07

2.22E−06

5.98E + 13

83

12

11.6

6.3

−0.34

−0.19

median

1.8

9.83E−12

0.003

1.26E−14

3.38E + 05

1.93E-07

5.20E + 12

100

15

11.3

6.2

−0.33

−0.18

max

3.6

7.86E−11

0.061

4.64E−12

1.25E + 08

1.14E−05

3.07E + 14

100

15

32.4

17.7

−0.04

−0.02

min

0.6

3.64E−13

0.0002

2.18E−15

5.87E + 04

2.36E−08

6.35E + 11

50

7

1.5

0.8

−0.95

−0.52

  1. †assumed spherical shape. Distance: distance from CSPN under (1) 100 mass%He, 5000 yr; (2) 30 mass%He, 5000 yr. Formation age: anchored by CSPNe phase under (1) and (2). b.d.: below detection limit. *4He signals were obscured by intense 4He signals from adjacent SiC grains.
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