Table 3 ⁴He concentration of mainstream SiC grain from Murchison and Murray (after Heck et al.¹⁵, 2007)

From: History of individual presolar SiC grains revealed by stellar winds

Grain	size/µm	mass†/g	bulk ⁴He /mL g^-1	bulk ⁴He /mL	bulk ⁴He /atom	Fluence /mL cm^-2	Fluence /atom cm^-2	Distance (1) /ly	Distance (2) /ly	Formation age (1) /My	Formation age (2) /My	¹²C/¹³C
Murchison
SiC102	1.3	3.70E−12	0.6281	2.33E−12	6.26E + 07	4.38E−05	1.18E + 15	0.8	0.4	−0.02	−0.01	72.7
SiC128	0.9	1.23E−12	0.796	9.78E−13	2.63E + 07	3.84E−05	1.03E + 15	0.8	0.4	−0.02	−0.01	47.0
SiC138	1.6	6.90E−12	0.0903	6.23E−13	1.68E + 07	7.75E−06	2.09E + 14	1.8	1.0	−0.05	−0.03	51.3
SiC166	1.4	4.62E−12	0.3732	1.73E−12	4.64E + 07	2.80E−05	7.54E + 14	0.9	0.5	−0.03	−0.02	60.9
SiC014	3.4	6.62E−11	0.0655	4.34E−12	1.17E + 08	1.20E−05	3.21E + 14	1.4	0.8	−0.04	−0.02	90.0
SiC068	2.8	3.70E−11	0.0101	3.74E−13	1.01E + 07	1.52E−06	4.08E + 13	4.0	2.2	−0.12	−0.06	56.4
SiC087	0.9	1.23E−12	0.154	1.89E−13	5.09E + 06	7.44E−06	2.00E + 14	1.8	1.0	−0.05	−0.03	19.3
SiC105	2.2	1.79E−11	0.0188	3.37E−13	9.07E + 06	2.22E−06	5.97E + 13	3.3	1.8	−0.10	−0.05	57.7
SiC110	1.9	1.16E−11	0.1069	1.24E−12	3.32E + 07	1.09E−05	2.93E + 14	1.5	0.8	−0.04	−0.02	67.7
SiC121	1.6	6.90E−12	0.0209	1.44E−13	3.88E + 06	1.79E−06	4.83E + 13	3.7	2.0	−0.11	−0.06	67.4
SiC134	0.9	1.23E−12	0.134	1.65E−13	4.43E + 06	6.47Ev06	1.74E + 14	2.0	1.1	−0.06	−0.03	69.4
average	1.7	1.44E−11	0.218	1.13E−12	3.04E + 07	1.46E−05	3.92E + 14	2.0	1.1	−0.06	−0.03	60.0
median	1.6	6.90E−12	0.107	6.23E−13	1.68E + 07	7.75E−06	2.09E + 14	1.8	1.0	−0.05	−0.03	60.9
max	3.4	6.62E−11	0.796	4.34E−12	1.17E + 08	4.38E−05	1.18E + 15	4.0	2.2	−0.02	−0.01	90.0
min	0.9	1.23E−12	0.0101	1.44E−13	3.88E + 06	1.52E−06	4.08E + 13	0.8	0.4	−0.12	−0.06	19.3
Murray
SiC207	1	1.69E−12	1.036	1.75E−12	4.70E + 07	5.56E−05	1.50E + 15	0.7	0.4	−0.02	−0.01	58.0
SiC210	1.4	4.62E−12	1.065	4.92E−12	1.32E + 08	8.00E−05	2.15E + 15	0.6	0.3	−0.02	−0.01	70.7
SiC211	1.1	2.24E−12	0.346	7.76E−13	2.09E + 07	2.04E−05	5.49E + 14	1.1	0.6	−0.03	−0.02	59.2
SiC219	1.1	2.24E−12	0.536	1.20E−12	3.23E + 07	3.16E−05	8.51E + 14	0.9	0.5	−0.03	−0.01	85.9
SiC242	0.8	8.63E−13	1.144	9.87E−13	2.66E + 07	4.91E−05	1.32E + 15	0.7	0.4	−0.02	−0.01	39.6
SiC252	1	1.69E−12	0.828	1.40E−12	3.75E + 07	4.44E−05	1.20E + 15	0.7	0.4	−0.02	−0.01	69.3
SiC271	0.6	3.64E−13	2.049	7.46E−13	2.01E + 07	6.60E−05	1.77E + 15	0.6	0.3	−0.02	−0.01	78.4
SiC215	0.7	5.78E−13	1.403	8.11E−13	2.18E + 07	5.27E−05	1.42E + 15	0.7	0.4	−0.02	−0.01	101.6
SiC228	0.8	8.63E−13	1.062	9.16E−13	2.46E + 07	4.56E−05	1.23E + 15	0.7	0.4	−0.02	−0.01	58.4
SiC229	1.1	2.24E−12	0.354	7.94E−13	2.14E + 07	2.09E−05	5.62E + 14	1.1	0.6	−0.03	−0.02	54.7
SiC235	0.8	8.63E−13	1.342	1.16E−12	3.11E + 07	5.76E−05	1.55E + 15	0.7	0.4	−0.02	−0.01	53.2
SiC247	0.8	8.63E−13	1.015	8.76E−13	2.36E + 07	4.36E−05	1.17E + 15	0.8	0.4	−0.02	−0.01	60.0
Average	0.9	1.59E−12	1.015	1.36E−12	3.66E + 07	4.73E−05	1.27E + 15	0.8	0.4	−0.02	−0.01	65.8
Median	0.9	1.27E−12	1.049	9.52E−13	2.56E + 07	4.74E−05	1.27E + 15	0.7	0.4	−0.02	−0.01	59.6
Max	1.4	4.62E−12	2.049	4.92E−12	1.32E + 08	8.00E−05	2.15E + 15	1.1	0.6	−0.02	−0.01	101.6
Min	0.6	3.64E−13	0.3460	7.46E−13	2.01E + 07	2.04E−05	5.49E + 14	0.6	0.3	−0.03	−0.02	39.6

†assumed spherical shape. Distance: distance from CSPN under (1) 100 mass%He, 5000 yr; (2) 30 mass%He, 5000 yr. Formation age: anchored by CSPNe phase under (1) and (2).

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Table 3 ⁴He concentration of mainstream SiC grain from Murchison and Murray (after Heck et al.¹⁵, 2007)

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