Fig. 3: Theoretical analysis of bias-dependent TMR.
a Schematic diagrams illustrating the \({{{{\bf{k}}}}}_{{{{\boldsymbol{\parallel }}}}}\)-resolved conduction channels of the Fe3GaTe2/GaSe/Fe3GaTe2 MTJ without considering both the decay term and the \({{{{\bf{k}}}}}_{{{{\boldsymbol{\parallel }}}}}\) scattering term at different bias voltages under P/AP states, respectively. b The band structure of bulk GaSe obtained from the first-principles calculations, where both the bottom of the conduction band and the top of the valence band are located at Γ. c, d The calculated TMR as a function of \({V}_{b}\) with (c) and without (d) considering the band structure of the GaSe barrier layer.
