Fig. 4: Gate-tunable magnetic transitions for the 3L CrSBr device. | Nature Communications

Fig. 4: Gate-tunable magnetic transitions for the 3L CrSBr device.

From: Charge transfer governed interlayer magnetic coupling and symmetry breaking in a van der Waals magnet

Fig. 4

a Magneto-PL loops under different gate voltages. Zoomed-in PL intensity from the Mixed states to FM states during the backward (b) and forward (c) sweeps at Vg = ±60 V. The insets show the magnetic structures corresponding to the PL intensity plateaus. Compared to Vg = −60 V, the middle plateau corresponding to the AFM states disappears at Vg = 60 V.

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