Fig. 1: In operando macro- and microscopic measurement of phase switching.
From: Imaging of electrically controlled van der Waals layer stacking in 1T-TaS2
a Schematic of the synchrotron beamline including the undulator (1), a toroidal mirror (2), the monochromator (3) and Kirkpatrick-Baez focusing mirrors (4). The 1.5 × 2.5 μm2 sized X-ray beam is directed at the 1T-TaS2 device (5) in a 4He cryostat that can be moved using translation stages. The device is electrically contacted, allowing for resistance measurements and application of current pulses. X-ray fluorescence (6) and diffraction (μXRD) (7) is recorded simultaneously on respective detectors. b Optical image of the 1T-TaS2 device. c Au fluorescence map highlighting the electrodes. d Diffraction patterns measured at 6 K at selected X-ray energies with the lattice (013) and (014) Bragg reflections, as well as one commensurate charge-density wave (CCDW) peak. e Conversion of the 2D detector images taken at various X-ray energies to 3D (hkl) reciprocal space. f In situ resistance upon cooling (blue) and heating (orange), and as a function of time with A the unswitched CCDW state, as well as B and C the partially- and fully-switched HCDW states, respectively.
