Fig. 2: Electrical properties of 4HCB and 4MHB single crystals.
a Schematic diagram of detector structure with sandwiched Au electrodes and alpha-particle ToF characterization. b J-E curves of 4HCB and 4MHB detectors. c and d 241Am alpha pulses in 4HCB and 4MHB single crystals at a series of bias voltages (vertical gray lines indicate the fall time (tf)). e Pulse fall time histogram of 4HCB single crystals biased at −100 V. f Pulse fall time histogram of 4MHB single crystals biased at −200 V. g and h Hole mobility value extrapolation from the drift velocity of 4HCB and 4MHB vs. electric field linear plot. i and j Pulse height spectra obtained with digital pulse shape analysis of 4HCB and 4MHB at various bias voltages. k and l Gaussian peak centroid position of 4HCB and 4MHB vs. applied voltage plot and Hecht equation fitting. Data in (b, g, h, k, l) are presented as mean ± 5% error.
