Fig. 2: Preparation of single-crystal Cu foils with high-index facets by the dislocation-driving strategy.
From: Dislocation-driven growth of single-crystal metal foils with high-index facets
a Photograph of a single-crystal Cu (113) foil after mild oxidation in air at 180 °C. The dark polycrystalline region on the right side was intentionally maintained as a reference for comparison. b Representative electron backscatter diffraction (EBSD) inverse pole figure in the normal direction (IPZ, top) and kernel average misorientation (KAM, bottom) maps of the single-crystal Cu(113) foil. c X-ray diffraction (XRD) 2θ scan spectrum of the single-crystal Cu foil with (113) orientation. Inset, azimuthal off-axis φ scan spectrum with a single prominent Cu(200) peak. d Representative atomically resolved high-resolution transmission electron microscopy (HRTEM) image of the single-crystal Cu(113) foil. Inset, fast Fourier transform pattern of the HRTEM image. e Several EBSD IPZ maps of single-crystal Cu foils with distinct high-index facets. f IPZ contour of statistical facet indices of single-crystal Cu foils obtained, demonstrating the deterministic growth of single crystals with diverse high-index facets. g Comparison of the grain growth rate and annealing temperature of our work (single-crystal Cu with high-index facets) with the reported results of single crystals prepared by means of abnormal grain growth.
