Fig. 1: First-principles calculated n-type Schottky barrier heights (N-SBH) of metal–semiconductor contacts.
From: Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts
Metal–Si (001) interfaces in a p(2 × 2) dimer reconstruction interface configuration and b c(1 × 1) non-reconstructed interface configuration. Metal–Ge (001) interfaces in c p(2 × 2) dimer reconstruction interface configuration and d c(1 × 1) non-reconstructed interface configuration. Gray squares with error bars (representing standard deviation) show the experimental data5,11,12,13,14,35,36,37.
