Fig. 4: First-principles calculated n-type Schottky barrier heights (N-SBH) after the complete passivation of the surface dangling bonds by hydrogen atoms.
From: Self-passivation reduces the Fermi level pinning in the metal-semiconductor contacts
a, b Metal–Si interfaces and metal–Ge interfaces. For comparison, the gray dots represent the predicted values in the ideal c(1 × 1) non-reconstructed and the p(2 × 2) dimer reconstruction configurations, as shown in Fig. 1.
