Fig. 1: TEM images of Ga₂O₃/SiC and Ga₂O₃/SiO₂/SiC heterojunctions before and after annealing.
From: Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC
a Schematic of the fabrication process. b Cross-sectional TEM image and corresponding EDS maps of the untreated sample. c EDS line scans of the cross-section. d HRTEM micrograph of Ga₂O₃/SiC heterojunction interface and SAED pattern (e) Cross-sectional TEM image and corresponding EDS maps of the sample annealed for 120 min at 1173 K. f EDS line scans of the cross-section. g HRTEM micrograph of Ga₂O₃/SiO2/SiC heterojunction interface and SAED pattern.
