Fig. 3: Depth-resolved XPS analysis and structural evolution of Ga₂O₃/SiC heterojunctions before and after annealing.
From: Improving interfacial thermal conductivity by constructing covalent bond between Ga₂O₃ and SiC
a Depth-profiled XPS spectral maps corresponding to Si 2 s and O 1 s core-level features across the Ga₂O₃/SiC heterojunction in the untreated sample. b The corresponding Si 2 s and O 1 s XPS peaks at different etching depths. c Depth-profiled XPS spectral maps corresponding to Si 2 s and O 1 s core-level features across the Ga₂O₃/SiC heterojunction in the sample annealed for 120 min. d The corresponding Si 2 s and O 1 s XPS peaks at different etching depths. e Schematic crystal structures of β-Ga₂O₃ and amorphous Ga₂O₃ after high-temperature thermalization. f Radial distribution function of amorphous Ga₂O₃. g Heterogeneous interface of Ga₂O₃ and 4H-SiC before and after the reaction. h Si-O bond ratios vary with reaction time.
