Fig. 3: Nonlinear Hall effect of (112)-LaAlO3/SrTiO3.
From: Magnetization generation and giant nonlinear transport at symmetry-engineered interfaces
a Second-harmonic transverse \({V}_{{xy}}^{2\omega }\) in response to the forward (upper panel) and backward (lower panel) a.c. current along \(\left[1\bar{1}0\right]\). Insets show the measurement configuration. b Nonlinear Hall response as a function of bias current direction \(\theta\) measured from a disc device. c Comparison of nonlinear Hall coefficients of twisted graphene (T-graphene)32, BaMnSb219, PbTaSe233, (111)-orientated LaAlO3/SrTiO3 ((111)-LAO/STO)24 and our work (112)-LaAlO3/SrTiO3. d Substrate orientation-dependent nonlinear Hall effect at room temperature. Error bars are the mean standard deviation of values obtained over at least 4 devices.
