Fig. 2: Experimental characterizations of fabricated chiral q-BIC metasurfaces and integrated devices. | Nature Communications

Fig. 2: Experimental characterizations of fabricated chiral q-BIC metasurfaces and integrated devices.

From: Room-temperature valley-selective emission in Si-MoSe2 heterostructures enabled by high-quality-factor chiroptical cavities

Fig. 2: Experimental characterizations of fabricated chiral q-BIC metasurfaces and integrated devices.

a Experimentally measured transmittance (T) spectrum for the metasurface shown in Fig. 1c and PL emission spectrum for A-exciton of monolayer MoSe2 in an integrated device. The PL emission spectrum is normalized to its peak intensity. PL photoluminescence, λ wavelength. b An optical image of a chiral metasurface array (yellow) integrated with MoSe2 monolayer flakes (pink areas). The yellow voids are holes in the monolayer. Scale bar: 50 μm. c Valley-selective emission for monolayer MoSe2 coupled to the chiral metasurface under linearly polarized photoexcitation. \({\sigma }^{\pm }\): left-handed or right-handed circularly polarized emission. Only conduction and valence bands involving A-exciton radiative transitions are shown for the scope of this work with the spin-splitting of the bands omitted. d PL intensity (I) mapping for the integrated device at 294 K with a field of view defined by a black square shown in (b). The photoexcitation is at 633 nm. Scale bar: 25 μm.

Back to article page