Fig. 2: Thickness and temperature dependent Raman conductivity.
From: Gate tuning of coupled electronic and structural phase transition in atomically thin Ta2NiSe5
a–d Temperature-dependent Raman conductivity color plot for bulk, trilayer, bilayer, and monolayer samples. e Temperature dependence of the QES spectral weight. High-temperature data points are missing because the QES signal becomes too weak for reliable fitting. The solid lines are Gaussian fits. f–i Temperature dependence of the amplitude, frequency, full width, and 1/∣q∣ of mode 2. j Thickness dependence of the temperature corresponding to the maximum or minimum values marked by arrows in (e–i) (filled symbols). The open squares are TC values estimated from electrical transport measurements. Error bars in (e–i) are standard deviations obtained from fitting analysis, and those in (j) represent uncertainties in determining the characteristic temperatures. All data were collected in the crossed polarization (ac) configuration.
