Fig. 3: Doping dependent electrical transport properties of bilayer Ta2NiSe5.
From: Gate tuning of coupled electronic and structural phase transition in atomically thin Ta2NiSe5
a Schematic structure of the dual-gate bilayer Ta2NiSe5 device D17. Gr: graphite electrodes. b Dual-gate mapping of the resistance measured at 150 K. The dashed line marks the charge neutrality and the arrows denote pure doping. c Doping-dependent resistance at selected temperatures. d Temperature-dependent resistance at charge neutrality and selected hole dopings. e Arrhenius plot of the resistance at typical doping levels. The solid lines are fits to the thermally activated temperature dependence over two temperature ranges. f Doping dependence of the activation gaps. The shaded areas represent error bars obtained from the fitting analysis.
