Fig. 5: Doping and temperature dependent QES and mode 2 parameters for bilayer Ta2NiSe5 device D50.
From: Gate tuning of coupled electronic and structural phase transition in atomically thin Ta2NiSe5
a Color map showing the doping and temperature dependence of the QES spectral weight. b Line cuts along the temperature axis at zero doping (undoped), the maximum electron doping (n-doped), and the maximum hole-doping (p-doped) in (a). The solid lines are Gaussian fits to the data above 250 K, with the fitted peak center corresponding to the TC and the full width at half maximum characterizing the temperature spread (ΔT) of the QES. c Doping dependence of TC (left axis) and ΔT (right axis). d–f, The upper panels show the doping and temperature dependent color maps of the frequency, amplitude, and 1/∣q∣ for mode 2. The lower panels are the corresponding line cuts at the same doping levels as those in (b). Error bars in (b–f) are standard deviations obtained from fitting analysis.
