Fig. 1: Current-induced domain wall motion in Fe3GaTe2 nanoflakes.
From: Highly efficient current-induced domain wall motion in a room temperature van der Waals magnet
a Upper: Kerr microscope image of the Racetrack device fabricated from a FGaT nanoflake. The violet area is the fabricated Racetrack device, isolated from the exfoliated flake via ion milling. Lower: Schematic illustration of the structure of FGT, showing the orientation of the crystal axes. b Exemplary images of the current induced motion of a single DW in the device shown in (a) at 290 K. The images show the position of the DW in response to bursts of 20 current pulses each with a magnitude of 3.2 MA cm−2 and a length of 5 ns that are injected between successive images. c RMCD signal from the FGaT Racetrack versus temperature. The dotted line is a fit to the experimental data (solid circles) of the form \(M\left(T\right)={M}_{{{{\rm{S}}}}}^{0}\times {(1-\frac{T}{{T}_{{{{\rm{C}}}}}})}^{\tau }\). d DW velocity, v, versus injected current density, J, at several temperatures. Temperature dependence of (e) DW mobility, u, and (f) threshold current density, Jth. All error bars in (c, d) correspond to 1 SD.
