Fig. 4: Racetrack memristor fabricated from the van der Waals magnet Fe3GaTe2.
From: Highly efficient current-induced domain wall motion in a room temperature van der Waals magnet
a Kerr microscopy image (top) and schematic of the measurement set-up (bottom) of a Racetrack memristor device, in which a DW is generated and placed within the Hall bar region. Two Hall bars are shown but only the leftmost Hall bar is used in these experiments. b Anomalous Hall resistance RXY of the Racetrack memristor device plotted as a function of exterior OOP field HZ. The light green shaded region shows the RXY regime where DW operations defined by bursts of pulse voltages are carried out in zero magnetic field. c Voltage-pulse-controlled states of RXY by bursts of current pulses in zero magnetic field. Results for bursts with varying numbers of voltage pulses are shown (top to bottom correspond to bursts with 10, 5, 2 and 1 pulses, respectively). d Schematic representation of the sequences of bursts used to give rise to the results shown in (c).
