Fig. 1: Electrical transport in NiPS3 down to monolayer thickness.
From: Nature of 2D XY antiferromagnetism in a van der Waals monolayer
a Top view of monolayer NiPS3 (top panel) and stacking of layers in NiPS3 structure (bottom panel, only Ni atoms are shown, dashed line is a unit cell). Red and blue arrows mark Ni spins of two magnetic sublattices and define the Néel vector L. b Room temperature sheet conductance (Gs) of 13 L, 6 L, 2 L, and 1 L NiPS3 FET devices as a function of back-gate voltage (VBG). The inset shows the schematic of a 2 L NiPS3 FET device and the measurement configuration. c Variable temperature sheet conductance (left axis) and its derivative (dGs/dT, right axis) of 13 L, 6 L, 2 L, and 1 L NiPS3. The peak of the dGs/dT corresponds to magnetic phase transition, marked by vertical dashed lines. Measurements were performed with the following VSD/VBG configurations: 2 V/90 V (13 L), 4 V/80 V (6 L), 2 V/100 V (2 L), and 2 V/80 V (1 L). d Transition temperature as a function of layer number. Error bars are the standard deviation of the transition temperatures collected from the measurements with different VBG, and/or from additional samples.
