Fig. 1: Conductive sacrificial layers and design proposal of DED process. | Nature Communications

Fig. 1: Conductive sacrificial layers and design proposal of DED process.

From: Efficient electrodynamic stripping for 12-inch wafer-scale freestanding ferroelectric oxide membranes

Fig. 1: Conductive sacrificial layers and design proposal of DED process.

a Synchrotron-based XRD patterns of LNO sacrificial layers on (001) orientated STO substrates. a.u., arbitrary units after logarithmic processing. The inset shows the (001) peaks with the satellite peaks, indicating the high-quality film. b Synchrotron-based X-ray RSMs of sacrificial layers around STO (103) diffraction regions. L, crystal index of (00L); H, crystal index of (H00). c STEM images of LNO film grown on the STO substrate, indicating the high-quality epitaxial relationship. d Schematic illustration of the DED process of the LNO sacrificial layer. The DED setup utilized in this study comprises a power supply and a carbon electrode paired with a positive PDMS/film/LNO/substrate assembly. e Schematic illustration of the DED mechanism for the LNO sacrificial layer. f Absorption intensity at 30 nm is dependent on the time for the LNO sacrificial layer using DED and conventional soaking methods. g Photographs of sacrificial layers decomposition via DED and conventional soaking approaches. The size of the STO substrate is 10 × 10 mm2.

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