Fig. 3: Internal and surface plasmon tip-enhanced electric field simulation.
From: Local avalanche photodetectors driven by lightning-rod effect and surface plasmon excitations
a The internal electric field intensity of the devices with MH (4 μm, 8 μm and 10 μm) and Al NTs under the charge accumulation effect at the tips of Al NTs was simulated by applying 15 V reverse bias. b The electric field intensity at the tips of Al NTs was simulated under different reverse biases (5 V, 15 V, and 40 V), with the electric field intensities at the edge of the device electrodes and at the tips of the Al NTs being 3.4 MV/cm and 0.74 MV/cm, 4.26 MV/cm and 2.28 MV/cm, and 6.35 MV/cm and 5.76 MV/cm, respectively, under the reverse biases of 5 V, 15 V, and 40 V. c Through FDTD simulations, the field enhancement of Al NTs under illumination was investigated at various distances, corresponding to the interspacing of NTs in SEM images of 10 nm, 20 nm, 30 nm, and 80 nm. The field enhancement at the tips of the Al NTs was found to be 31.52, 18.42, 18.39, and 18.33, respectively, for interspaces of 10 nm, 20 nm, 30 nm, and 80 nm.
