Fig. 4: Nanosecond-level response time and local avalanche schematic diagram.
From: Local avalanche photodetectors driven by lightning-rod effect and surface plasmon excitations
a The response speed of the 4 μm-MH devices with Al NTs at 10 V, and the inset shows the single impulse response of the device with Al NTs at 10 V. b Comparisons of single impulses of the devices with and without Al NTs at 0 V and 10 V. c A schematic diagram of the structure that generates a local avalanche effect under illumination, excited by Al NTs. d Band diagram of the APD with MHs and Al NTs under the condition of illumination.
