Fig. 1: Microstructure and hysteresis loop of designed FTJ device. | Nature Communications

Fig. 1: Microstructure and hysteresis loop of designed FTJ device.

From: Mapping electric fields and observation of ferroelectric domain switching in hafnia-zirconia devices by electron holography

Fig. 1: Microstructure and hysteresis loop of designed FTJ device.

a Schematic map. b High-resolution TEM image. Scale bar is 5 nm. c Remanent P-V hysteresis curve measured by positive up negative down (PUND method) after 5000 wake-up cycles. In (a), HZO represents the Hf0.5Zr0.5O2 layer. In (c), A, B, C, D, E, F, G, H, I, J, K and L (L’), respectively, represent the bias at +2 V, +1 V, 0 V, −1 V, −2 V, −3 V, −4 V, −4 V, −3 V, −2 V, −1 V and 0 V, in which L’ points to 0 V from a 2nd cycle after −5 V.

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