Fig. 1: Characterization of the performance of a TRNG based on an MTJ. | Nature Communications

Fig. 1: Characterization of the performance of a TRNG based on an MTJ.

From: Probabilistic greedy algorithm solver using magnetic tunneling junctions for traveling salesman problem

Fig. 1

a Schematic of the device structure and measurement setup. b R-H hysteresis loops obtained by sweeping an out-of-plane magnetic field. c Resistance switching behavior of the MTJ induced by current pulses, which trigger free layer magnetization switching. d MTJ switching probability as a function of applied write voltage. The black solid line represents the fitted sigmoidal curve. e Resistance measurements from continuous testing at fixed voltages of 0.275 V, 0.282 V, and 0.288 V, corresponding to switching probabilities of 25%, 48%, and 81%, respectively.

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