Fig. 6: Transport and noise data for NbS3-II nanowire devices. | Nature Communications

Fig. 6: Transport and noise data for NbS3-II nanowire devices.

From: A quieter state of charge and ultra-low-noise of the collective current in quasi-1D charge-density-wave nanowires

Fig. 6

a Optical microscopy image of an NbS3 nanowire device with several top metal electrodes. The white/dark colors correspond to high/low light reflection. b The I–V characteristics of the middle channel in the incommensurate CDW phase at room temperature. The collective current of the CDW sliding condensate is shown with blue circles. c Differential resistance dependence on applied bias, between T = 280 K and 395 K. The threshold voltage, Vt, for depinning increases with decreasing temperature, as expected. d The noise spectra at higher biases, when the current is dominated by the CDW condensate. e The noise, \({S}_{I}/{I}^{2}\), at a fixed frequency \(f=\)10 Hz vs. bias voltage, measured at T = 300 K. f The same as (e), measured at T = 320 K. The black and magenta colored straight lines indicate the linear and CDW sliding noise levels, respectively. The total normalized noise in NbS3-II decreases below the normal electron noise limit, like in (TaSe4)2I nanowires, but then shows saturation behavior at high bias, indicating the intrinsic CDW noise level in this material.

Back to article page