Fig. 1: The challenges posed by the scaling of Cu interconnect and the requirements for the materials available for the next-generation diffusion barrier. | Nature Communications

Fig. 1: The challenges posed by the scaling of Cu interconnect and the requirements for the materials available for the next-generation diffusion barrier.

From: Single atom Ru-supported reduced graphene oxide integrated self-assembled monolayer as a nm-scale Cu diffusion barrier

Fig. 1

a The schematic diagram representative of the damascene structure of Cu interconnect. b Comparison between the diffusion barrier fabricated in this work (Ru SA-rGO/SAM structure) and the conventional TaN/Ta bilayer. The diffusion barrier presented in this work simultaneously meets the requirements of ultra-thin, excellent diffusion barrier properties, high conductivity, and compatibility with BEOL process.

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