Fig. 5: Ability of single atom Ru-supported (Ru SA)-rGO/SAM to block Cu thermal diffusion.

a Schematic diagram of thermal diffusion failure mechanism of Cu interconnects. b HRTEM image, c HAADF-STEM image, and STEM-EDS mapping of d Cu, e Si and f O of the cross section of Cu/Ru SA-rGO/SAM/SiO2/Si structure after annealing at 600 °C for 30 min. g XRD patterns of samples including Cu/SiO2, Cu/SAM/SiO2, Cu/rGO/SAM/SiO2, and Cu/Ru SA-rGO/SAM/SiO2 under different annealing conditions (As-deposited, 400 °C 30 min, 500 °C 30 min, and 600 °C 30 min). Source data are provided as a Source Data file.