Fig. 1: Design of the modulator on the silicon platform.
From: Ultracompact and large-bandwidth silicon modulator in a CMOS-compatible foundry
a Analytical results of the fundamental functions among the Q factor, dynamic extinction ratio, and electro-optic bandwidth with various tuning efficiencies. The data marked by the circle correspond to Q = 3000. b Schematic diagram of the photonic crystal nanobeam cavity; the inset shows the simulated optical field distribution of the photonic crystal nanobeam cavity at resonance. c Basic unit cell of the one-dimensional photonic crystal nanobeam cavity. Band diagram of d the mirror regions and e the center unit cell in the taper regions. f Group index ng ≥ 4.2 within the cavity along the x-axis. The dashed line indicates the group index of a conventional silicon rib waveguide for comparison. g Three-dimensional schematic diagram of the designed modulator; the inset depicts the mode field in the rib waveguide. h Cross section of the modulator.
