Fig. 2: Fabrication and static characterization of the proposed modulator.
From: Ultracompact and large-bandwidth silicon modulator in a CMOS-compatible foundry
a Optical microscope image of the fabricated photonic crystal nanobeam cavity modulator. b Magnified optical image of the center of the proposed device. c Measured transmission spectra versus reverse bias voltage ranging from −1 V to −5 V; the inset shows the detailed optical spectra under the bias of −2 V, −3 V, and −4 V, respectively. G ground, S signal.
