Fig. 4: Electrical properties and benchmark of bilayer MoTe2 with m-Te contacts.
From: Metallic tellurium for p-type contacts of two-dimensional MoTe2 field-effect transistors
a,b P-type bilayer MoTe2 FET electrical characteristics. Transfer curves (a) of bilayer MoTe2 with m-Te contacts showing pure p-type device characteristics. Linear output characteristics (b) of bilayer MoTe2 with Te contacts. Vgs, Vds and Ids refer to gate voltage, bias voltage and current density, respectively. W = 2.63 μm, L = 788 nm. c Transfer length method (TLM) results of bilayer MoTe2 with m-Te contacts when the hole density is around 1 × 1013 cm-2. The inset shows the optical microscope image of the TLM device. Scale bar, 2 μm. d Arrhenius plots of the Te–MoTe2 at Vgs from -10 V to -25 V and Vds of -1 V. T is temperature, with the unit being Kelvin. The barrier for the Te–MoTe2 interface is negligible. e Ids–Vds curves of the Te-bilayer MoTe2 (exfoliated) field-effect transistor (FET) with Lch of 130 nm. Vgs: 0 V to -40 V, step: -1 V. Ion is the current density at minimum Vgs (-40 V here) and Vds of -1 V. f Statistics of Ion for 25 Te-contacted bilayer MoTe2 transistors. Data are extracted at the hole density around 1×1013 cm-2 and at the same Vds of -1 V. g, h Benchmark of current density and on/off ratio of p-type MoTe2 FETs (g) and of current density and contact resistance of p-type FETs based on MoTe2 FETs and undoped WSe2 FETs (h), with values reported in the literature using different methods. The blue and yellow marks represent the performance of p-type MoTe2 FETs42,43,44,45,46,47,48,49,50,51,52 and WSe2 FETs7,12,28,31,32,53,54,55, respectively. The symbols for solid and hollow, respectively, represent devices with 1-2 layers and three or more layers. All current densities are collected at Vds of -1 V.
