Fig. 2: Atomic STEM characterizations of the Co/MLG and Co/In/MLG interfacial structure.
From: Room-temperature high-efficiency spin injection via van der Waals tunnel contact
a BF image (top) and EDS element mappings (middle) of the cross-sectional interface of Co/MLG. Yellow dashed lines highlight the disordered layer region. EDS spectrum (bottom) of the whole region show no other elemental signal except Co and C. The Cu peak comes from the TEM grid. b, c BF images (top) and EDS elemental mappings (middle) of the cross-sectional interface of Co/In (4 nm)/MLG (b) and Co/In (6 nm)/MLG (c). A sharp and clean interface between Co and MLG is observed in (b), while excessive In aggregates near the interface in (c). EDS spectra (bottom) unambiguously indicate the presence of In inside the Co electrode. Scale bars: 5 nm (top), 20 nm (middle).
