Fig. 3: Photovoltaic performance of the devices.

a J–V curves of rigid devices using different blend films including PzA5:L8BO, UVC, and UVC + ASH. b EQE response of the corresponding rigid devices. c Transient absorption intensity at donor GSB wavelength. d J–V curves for stretchable devices fabricated on TPU substrate. (inset: the schematic architecture of stretchable devices). e J–V curves under stretching strains for UVC + ASH stretchable devices fabricated on TPU substrate. f Summary of photovoltaic performance and stretching strain of 80% PCE retention of IS-OPVs reported in the literature (dashed lines represent the upper limit and the average level of the performances). g Evolution of the 0-0/0-1 absorption peak ratio under increasing strains (D and A correspond to the peak of donor and acceptor, respectively) for PzA5:L8BO and UVC + ASH blend films. h Charge extraction by linearly increasing voltage (photo-CELIV) results of PzA5:L8BO and UVC + ASH IS-OPV devices under varying strains. i Dependence of the carrier mobility calculated from photo-CELIV on the stretching strain.